DocumentCode
1887572
Title
Parasitic current channel suppression and output power increasing in pHEMT´s
Author
Lukashin, V.M. ; Pashkovskiy, A.B. ; Zhuravlev, K.S. ; Toropov, A.I. ; Lapin, V.G.
Author_Institution
Fed. State Unitary Corp. R&PC, Fryazino, Russia
fYear
2012
fDate
10-14 Sept. 2012
Firstpage
78
Lastpage
79
Abstract
The first result of power pHEMT´s with the optimized quantum well and additional potential barrier development have been submitted. High power transistor with gate length about (0.4...0.5) μm and 0.8 mm width demonstrates specific output power higher than 1.4 W/mm, associated gain higher than 8 dB and efficiency about 50% at 10 GHz.
Keywords
microwave field effect transistors; microwave power transistors; power HEMT; quantum well devices; frequency 10 GHz; high power transistor; parasitic current channel suppression; power pHEMT; quantum well optimization; Electronic mail; Gallium arsenide; Logic gates; MODFETs; PHEMTs; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-1-4673-1199-1
Type
conf
Filename
6335850
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