• DocumentCode
    1887918
  • Title

    A 2.7e- temporal noise 99.7% shutter efficiency 92dB dynamic range CMOS image sensor with dual global shutter pixels

  • Author

    Yasutomi, Keita ; Itoh, Shintaro ; Kawahito, S.

  • Author_Institution
    Shizuoka Univ., Hamamatsu, Japan
  • fYear
    2010
  • fDate
    7-11 Feb. 2010
  • Firstpage
    398
  • Lastpage
    399
  • Abstract
    A dual global shutter CIS with pinned storage diode and floating diffusion memory enables a low noise level of 2.7e- and wide dynamic range of 92dB. Dual doping pinned diodes with a shielding structure attain a high shutter efficiency of 99.7%.
  • Keywords
    CMOS image sensors; CMOS image sensor; dual global shutter pixels; floating diffusion memory; noise figure 92 dB; pinned storage diode; shutter efficiency; temporal noise; CMOS image sensors; Charge transfer; Dark current; Diodes; Doping; Dynamic range; Noise cancellation; Noise level; Photodiodes; Pixel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4244-6033-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2010.5433976
  • Filename
    5433976