DocumentCode
1887918
Title
A 2.7e- temporal noise 99.7% shutter efficiency 92dB dynamic range CMOS image sensor with dual global shutter pixels
Author
Yasutomi, Keita ; Itoh, Shintaro ; Kawahito, S.
Author_Institution
Shizuoka Univ., Hamamatsu, Japan
fYear
2010
fDate
7-11 Feb. 2010
Firstpage
398
Lastpage
399
Abstract
A dual global shutter CIS with pinned storage diode and floating diffusion memory enables a low noise level of 2.7e- and wide dynamic range of 92dB. Dual doping pinned diodes with a shielding structure attain a high shutter efficiency of 99.7%.
Keywords
CMOS image sensors; CMOS image sensor; dual global shutter pixels; floating diffusion memory; noise figure 92 dB; pinned storage diode; shutter efficiency; temporal noise; CMOS image sensors; Charge transfer; Dark current; Diodes; Doping; Dynamic range; Noise cancellation; Noise level; Photodiodes; Pixel;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4244-6033-5
Type
conf
DOI
10.1109/ISSCC.2010.5433976
Filename
5433976
Link To Document