DocumentCode
1887972
Title
New doping technology-plasma doping-for next generation CMOS process with ultra shallow junction-LSI yield and surface contamination issues
Author
Takase, Michihiko ; Mizuno, Bunji
Author_Institution
Central Res. Lab., Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
fYear
1997
fDate
6-8 Oct 1997
Lastpage
12
Abstract
Plasma doping method as a candidate to alternate conventional ion implantation has been proposed. LSI yield and surface contamination were confirmed for realizing mass production. This method has ultra low energy capability with very high throughput
Keywords
CMOS integrated circuits; ULSI; integrated circuit yield; ion implantation; plasma applications; surface contamination; LSI yield; doping technology; mass production; next generation CMOS process; plasma doping method; surface contamination; ultra shallow junction; ultralow energy capability; unconventional ion implantation; very high throughput; CMOS process; CMOS technology; Doping; Ion implantation; Plasma applications; Plasma immersion ion implantation; Plasma properties; Plasma sources; Plasma temperature; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-3752-2
Type
conf
DOI
10.1109/ISSM.1997.664494
Filename
664494
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