DocumentCode
1888960
Title
Beam profile measurement of volcano-structured double-gated Spindt-type filed emitter arrays
Author
Nagao, Masayoshi ; Gotoh, Yasuhito ; Neo, Yoichiro ; Mimura, Hidenori
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear
2015
fDate
13-17 July 2015
Firstpage
190
Lastpage
191
Abstract
Volcano-structured double-gate Spindt type field emitter arrays were fabricated using double-layered photoresist as a lift-off layer for the image sensor application. The emitter material that we tested is Ni and Mo/Ni. Electron beam focusing characteristics were evaluated by scanning slit method.
Keywords
electron beam focusing; field emitter arrays; image sensors; molybdenum; nickel; photoresists; Mo-Ni; beam profile measurement; double-gated Spindt-type filed emitter arrays; double-layered photoresist; electron beam focusing characteristics; emitter material; image sensor application; scanning slit method; volcano-structured field emitter arrays; Electrodes; Electron beams; Focusing; Image sensors; Logic gates; Nickel; Resists; Spindt-type emitter; beam focusing; double gate FEA; image sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location
Guangzhou
Print_ISBN
978-1-4673-9356-0
Type
conf
DOI
10.1109/IVNC.2015.7225578
Filename
7225578
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