DocumentCode
1889135
Title
Design of millimeter IMPATT diodes with concentric ring geometry of active structures in pulsed mode
Author
Tashilov, A.S. ; Dyshekov, A.A. ; Khapachev, Y.P. ; Bagov, A.N.
Author_Institution
Kabardino-Balkarian State Univ. Of Nalchik, Nalchik, Russia
fYear
2012
fDate
10-14 Sept. 2012
Firstpage
114
Lastpage
115
Abstract
For the pulse millimeter IMPATT diodes a new configuration of active structures as an array of concentric ring mesa structures is proposed. Numerical evaluation of pulsed thermal spreading resistance IMPATT 8-mm range on the basis of such arrays with the width of the ring 4 μm pulse duration nutrition 100 and 300 ns is carried out. A possibility of a significant reduction in the proposed configuration of the active structure in comparison with the standard one mesa design with an equal area of the p-n junction is studied.
Keywords
IMPATT diodes; millimetre wave diodes; p-n junctions; concentric ring geometry; concentric ring mesa structures; impact avalanche transit-time diodes; p-n junction; pulse millimeter IMPATT diodes; pulsed mode; pulsed thermal spreading resistance; size 4 mum; size 8 mm; time 100 ns to 300 ns; Arrays; Copper; Heat sinks; P-n junctions; Structural rings; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-1-4673-1199-1
Type
conf
Filename
6335908
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