Study of semi-insulating LEC InP in China

Author

Sun, Niefeng ; Wu, Xiawan ; Zhao, Youwen ; Shen, Nengjue ; Chen, Xudong ; Pu, Chaoguang ; Bi, Keyun ; Yang, Guangyao ; Xu, Yongqiang ; Yang, Kewu ; Zhao, Zhengping ; Sun, Tongnian ; Guo, Weilian ; Lin, Lanying ; Wang, Liang ; Zhao, Quan ; Huang, Yan ; Bel

Author_Institution

Hebei Semicond. Res. Inst., China

fYear

2002

fDate

2002

Firstpage

509

Lastpage

512

Abstract

Semi-Insulating InP is used in microelectronics devices and integrated opto-electronic circuits. The Chinese InP research team used a direct P-injection synthesis and LEC crystal growth method to prepare polycrystalline InP and to grow the undoped InP and Fe-doped SI-InP single crystal in the same puller. We can get very low concentration silicon in the ingots by using this method. And in the InP crystal the main impurity is silicon, which acts as a shallow donor in the crystal. The undoped InP has been found to be annealed into SI material around 900°C. The Chinese InP research team present a model to explain the possible mechanisms of the Semi-Insulating behavior of bulk InP material. The physical properties of SI-InP have been studied. We have combined a variety of techniques such as FT-IR, PICTS, Hall, TDH, PL, PAS, and GDMS to investigate SI-InP. Most of the data can be explained by this model. Furthermore we compared the results of the MOCVD material, which grow on the annealed undoped SI-InP and on Fe-doped SI-InP.

Keywords

Fourier transform spectra; Hall effect; III-V semiconductors; annealing; crystal growth from melt; impurity states; indium compounds; infrared spectra; iron; mass spectroscopic chemical analysis; photoconductivity; photoluminescence; positron annihilation; semiconductor growth; silicon; 900 degC; China; FT-IR; Fe-doped SI-InP single crystal; GDMS; Hall results; InP:Fe,Si; LEC crystal growth; PAS; PICTS; PL; TDH; direct P-injection synthesis; impurity; ingots; integrated opto-electronic circuits; microelectronics; polycrystalline InP; semi-insulating LEC InP; shallow donor; silicon; undoped SI-InP; Annealing; Conducting materials; Crystalline materials; Indium phosphide; Iron; Physics; Semiconductor materials; Silicon; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014479

Filename

1014479