Global time-domain full-wave analysis of microwave FET oscillators and self-oscillating mixers

Author

Min Chen ; Deal, W.R. ; Houshmand, B. ; Itoh, T.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

1135

Abstract

The global time-domain nonlinear analysis of microwave FET oscillators and self-oscillating mixers using the extended FDTD technique is presented. Employing the concept of equivalent current/voltage sources, the device-wave interaction is characterized and incorporated into the FDTD time-stepping algorithm. Consequently, investigation of highly nonlinear phenomena, such as injection locking and intermodulation, can be accomplished by utilizing a large-signal device circuit model. Theoretical results are validated by experiments.

Keywords

equivalent circuits; finite difference time-domain analysis; injection locked oscillators; intermodulation; microwave mixers; microwave oscillators; nonlinear network analysis; FDTD time-stepping algorithm; device-wave interaction; equivalent current/voltage sources; extended FDTD technique; global time-domain full-wave analysis; highly nonlinear phenomena; injection locking; intermodulation; large-signal device circuit model; microwave FET oscillators; nonlinear analysis; self-oscillating mixers; Circuit analysis; Circuit simulation; Finite difference methods; Frequency; Injection-locked oscillators; Microwave FETs; Microwave oscillators; Nonlinear circuits; Time domain analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705194

Filename

705194