Negative transconductance in trench-type InGaAs/InAlAs quantum wire FET

Author

Jang, Kee-Youn ; Sugaya, Takeyoshi ; Hahn, Cheol-Koo ; Shinoda, Akito ; Yonei, Kenji ; Ogura, Mutsuo ; KOMORI, Kazuyoshi

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

fYear

2002

fDate

2002

Firstpage

581

Lastpage

584

Abstract

The effects of negative differential resistance (NDR) and negative transconductance are observed in an InGaAs/InAlAs (25^w×10^t nm) quantum wire (QWR)-field effect transistor (FET) that is fabricated with a trench-type QWR grown on a (311)A V-groove patterned InP substrate by molecular beam epitaxy (MBE). The quantized conductance fluctuations are clearly observed at the relatively high temperature of 24 K, which indicates a high quality QWR is realized by our novel trench type epitaxial growth method. The quantized conductance result can be explained by the energy sub-level related resonant tunneling like phenomenon between one-dimensional states of the QWR and the two-dimensional states of the reservoir. Especially, the negative transconductance characteristics are observed at 6 K.

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; fluctuations; gallium arsenide; indium compounds; molecular beam epitaxial growth; negative resistance devices; resonant tunnelling transistors; semiconductor quantum wires; 24 K; 6 K; InGaAs-InAlAs; InGaAs/InAlAs quantum wire FET; MBE; NDR; V-groove patterned InP substrate; field effect transistor; molecular beam epitaxy; negative differential resistance; negative transconductance characteristics; one-dimensional states; quantized conductance fluctuations; resonant tunneling like phenomenon; trench type epitaxial growth method; trench-type FET; two-dimensional states; FETs; Fluctuations; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Temperature; Transconductance; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014495

Filename

1014495