Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction

Author

Betti, A. ; Fiori, G. ; Iannaccone, G.

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa, Italy

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

We predict the possibility of shot noise enhancement in defect-free Carbon Nanotube Field Effect Transistors, through a numerical investigation based on Monte Carlo simulations of randomly injected electrons from the reservoirs and the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green´s functions formalism. Such enhancement can be explained by a positive correlation between holes trapped in quasi-bound states in the channel valence band and thermionic electrons injected from the source and can yield a remarkable Fano factor at room temperature equal to 1.22.

Keywords

Green´s function methods; Monte Carlo methods; Poisson equation; Schrodinger equation; carbon nanotubes; field effect transistors; shot noise; C; Fano factor; Monte Carlo simulations; Poisson equations; Schrodinger equations; carbon nanotube FET; channel valence band; defect-free carbon nanotube field effect transistors; electron-hole interaction; nonequilibrium Green´s functions formalism; quasi-bound states; shot noise enhancement; temperature 293 K to 298 K; thermionic electrons; Charge carrier processes; Correlation; FETs; Logic gates; Noise; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677956

Filename

5677956