DocumentCode
1892653
Title
Schred V2.0: Tool to model MOS capacitors
Author
Kannan, Gokula ; Vasileska, Dragica
Author_Institution
Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear
2010
fDate
26-29 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
In this paper we present SCHRED V2.0 to the scientific community. This simulation tool allows modeling of MOS capacitors with silicon and strained-Si substrates with arbitrary crystallographic directions. The tool can also model any material whose conduction band model is represented with three significant valleys. It is also capable of modeling a MOS capacitor with High-K Dielectric. Simulation results are presented which illustrate the versatility of the tool.
Keywords
MOS capacitors; high-k dielectric thin films; MOS capacitors; Schred V2.0; Si; arbitrary crystallographic directions; high-k dielectric; Capacitance; High K dielectric materials; MOS capacitors; Mathematical model; Semiconductor process modeling; Silicon; Symmetric matrices; ID Schrodinger-Poisson solvers; MOS capacitors; quantum-mechanical size quantization effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location
Pisa
Print_ISBN
978-1-4244-9383-8
Type
conf
DOI
10.1109/IWCE.2010.5677977
Filename
5677977
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