Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors

Author

Marino, Fabio Alessio ; Guerra, Diego ; Ferry, David K. ; Goodnick, Sthepen M. ; Saraniti, Marco

Author_Institution

Dept. of Inf. Eng., Univ. of Padova, Padova, Italy

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

Quantum well field effect transistors have been proposed as promising device candidates for future high-speed and low-power logic applications due to their high electron mobility. This paper aims to study InAs and InGaAs state-of-the-art QWFETs, investigating both RF and DC performance through our full band Cellular Monte Carlo simulator, which includes the full details of the band structure and the phonon spectra. A complete characterization of these devices has been performed using experimental data to calibrate the simulation parameters.

Keywords

III-V semiconductors; Monte Carlo methods; field effect transistors; gallium arsenide; high electron mobility transistors; indium compounds; low-power electronics; quantum well devices; semiconductor device models; DC performance; InAs; InGaAs; QWFET; RF performance; band structure; cellular Monte Carlo investigation; high electron mobility; low power logic application; phonon spectra; quantum well field effect transistors; Capacitance; Cutoff frequency; Logic gates; Monte Carlo methods; Performance evaluation; Quantization; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5678003

Filename

5678003