A DC and small signal model for high electron mobility transistors

Author

Ahn, Hyungkeun ; El Nokali, Mahmoud

Author_Institution

Dept. of Electr. Eng., Pittsburgh Univ., PA, USA

fYear

1993

fDate

18-19 May 1993

Firstpage

151

Lastpage

155

Abstract

A new model is presented for high electron mobility transistors (HEMTs). It is based on a single analytical function that describes the electron concentrations in the two-dimensional electron gas and in the AlGaAs layer. The model results in closed-form expressions for the current, transconductance and output conductance. The theoretical predictions of the model are compared with experimental data and shown to be in good agreement over a wide range of bias conditions

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; semiconductor device models; two-dimensional electron gas; AlGaAs layer; DC model; HEMT; closed-form expressions; electron concentrations; high electron mobility transistors; output conductance; semiconductor; single analytical function; small signal model; transconductance; two-dimensional electron gas; Electrons; Gallium arsenide; HEMTs; Integral equations; MODFETs; Photonic band gap; Poisson equations; Potential well; Temperature; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial

Conference_Location

Research Triangle Park, NC

ISSN

0749-6877

Print_ISBN

0-7803-0990-1

Type

conf

DOI

10.1109/UGIM.1993.297017

Filename

297017