DocumentCode
1893598
Title
Subthreshold analysis of floating-gate MOSFET´s
Author
Yang, Kewei ; Andreou, Andreas G.
Author_Institution
Dept. of Electr. & Comput. Eng., John Hopkins Univ., Baltimore, MD, USA
fYear
1993
fDate
18-19 May 1993
Firstpage
141
Lastpage
144
Abstract
An analytical model for subthreshold operation of floating-gate MOSFETs is presented. The authors; first-order analysis shows exponential dependence between the current and drain-to-substrate and source-to-substrate voltages; this is confirmed by experimental data. A small-signal model is presented for the common source configuration. Methods for adjusting the charge on the floating gate are also discussed
Keywords
CMOS integrated circuits; VLSI; insulated gate field effect transistors; semiconductor device models; CMOS technology; analytical model; common source configuration; digital VLSI; exponential dependence; first-order analysis; floating gate MOSFET; small-signal model; subthreshold operation; Analytical models; CMOS technology; Capacitance; MOSFET circuits; Neuromorphics; Power system modeling; Read only memory; Semiconductor device modeling; Very large scale integration; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial
Conference_Location
Research Triangle Park, NC
ISSN
0749-6877
Print_ISBN
0-7803-0990-1
Type
conf
DOI
10.1109/UGIM.1993.297019
Filename
297019
Link To Document