Three-Dimensional Modeling of the Two Photon Absorption Effect in a Complex Bipolar Transistor

Author

Sternberg, A.L. ; Boulghassoul, Y. ; Massengill, L.W. ; McMorrow, D. ; Lotshaw, W.T. ; Melinger, J. ; Buchner, S. ; Pease, R.L.

Author_Institution

Van-derbilt Univ., Nashville

fYear

2005

fDate

19-23 Sept. 2005

Abstract

Full three-dimensional device simulations are used to investigate charge collection in a complex bipolar transistor in the LM124 operational amplifier. The results are compared to two-photon absorption experiments and circuit simulations. The simulation results demonstrate the various circuit responses that may result from strikes on a single device. The range of responses makes it difficult to use circuit-only simulations to predict single-event effects in transistors with complex geometries.

Keywords

bipolar transistors; operational amplifiers; radiation effects; two-photon processes; LM124 operational amplifier; charge collection; circuit simulations; complex bipolar transistor; single-event effects; three-dimensional device simulations; two-photon absorption; Absorption; Analytical models; Bipolar transistors; Circuit simulation; Circuit testing; Discrete event simulation; Geometry; Laser modes; SPICE; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on

Conference_Location

Cap d´Agde

ISSN

0379-6566

Print_ISBN

978-0-7803-9502-2

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2005.4365575

Filename

4365575