Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulation

Author

Shen, Z. ; Chow, T.P.

Author_Institution

Dept. of Electr. & Comput. Sci. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1993

fDate

18-20 May 1993

Firstpage

165

Lastpage

170

Abstract

A semiempirical CAD (computer-aided design) model for power IGBTs (insulated-gate bipolar transistors) which is physically based and uses subcircuit representation is presented. The model has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a simple form with readily extractable model parameters. The model has been implemented into the ContecSPICE circuit simulator. A systematic way of determining model parameters has also been developed. A 500-V/20-A commercial IGBT (Motorola MGP20N50) is fully characterized to verify the validity of the model. Good agreement has been obtained between simulation and measurement for both DC and transient cases

Keywords

SPICE; digital simulation; insulated gate bipolar transistors; power transistors; semiconductor device models; 20 A; 500 V; ContecSPICE circuit simulator; DC operation; Motorola MGP20N50; SPICE simulation; insulated gate bipolar transistor; model parameters; power IGBTs; semiempirical CAD model; subcircuit representation; transient cases; Analytical models; Circuit simulation; Computational efficiency; Computational modeling; Design automation; Equations; Flexible printed circuits; Insulated gate bipolar transistors; Power system modeling; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297086

Filename

297086