DocumentCode
1894980
Title
Method of ohmic contact characterization from heat stability and contact resistance by example of contacts to SiC 6H
Author
Kudryk, Y.Y.
Author_Institution
Lashkaryov Inst. of Semicond. Phys. of NAS of Ukraine, Kiev, Ukraine
fYear
2012
fDate
10-14 Sept. 2012
Firstpage
645
Lastpage
646
Abstract
Using contacts to silicon carbide as an example, a method of ohmic contact characterization from heat stability and contact resistance is proposed. The method is based on the known empirical dependences of (i) contact resistivity on the semiconductor doping level and (ii) ohmic contact degradation on time and temperature.
Keywords
contact resistance; electrical resistivity; ohmic contacts; semiconductor doping; silicon compounds; wide band gap semiconductors; SiC; contact resistance; contact resistivity; empirical dependences; heat stability; ohmic contact characterization; ohmic contact degradation; semiconductor doping level; silicon carbide contacts; Annealing; Contact resistance; Materials; Nickel; Ohmic contacts; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-1-4673-1199-1
Type
conf
Filename
6336131
Link To Document