• DocumentCode
    1894983
  • Title

    New method of surface recombination velocity measurement for power device simulation

  • Author

    Yahata, A. ; Tholmann, K. ; Yamaguchi, M. ; Ohashi, H.

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • fYear
    1993
  • fDate
    18-20 May 1993
  • Firstpage
    154
  • Lastpage
    158
  • Abstract
    A novel method of surface recombination velocity measurement for evaluating high-voltage lateral power devices is presented. This method is based on the combination of experiment and simulation for the time decay of photoluminescence emitted from Si crystals. Good results were obtained for a Si crystal with an SiO2 cap
  • Keywords
    electron-hole recombination; elemental semiconductors; luminescence of inorganic solids; photoluminescence; power electronics; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO2; high-voltage lateral power devices; photoluminescence; power device simulation; surface recombination velocity measurement; time decay; Interface states; Laser excitation; Nitrogen; Optical filters; Optical pulses; Photoluminescence; Space vector pulse width modulation; Surface emitting lasers; Velocity measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
  • Conference_Location
    Monterey, CA
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-1313-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.1993.297088
  • Filename
    297088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1894983