DocumentCode
1895006
Title
Proceedings of ISPSD ´93 - 1993 International Symposium on Power Semiconductor Devices and IC´s
fYear
1993
fDate
18-20 May 1993
Abstract
The following topics are dealt with: insulated-gate bipolar transistors; MOS-gated thyristors; materials and device technology; DI (dielectric isolation) technology; DMOS; lateral JI (junction-isolated) devices; lateral DI devices; high-power devices/modules; applications/packaging
Keywords
power electronics; power integrated circuits; power transistors; semiconductor devices; DMOS; MOS-gated thyristors; applications; device technology; dielectric isolation technology; high-power devices; insulated-gate bipolar transistors; lateral junction-isolated devices; materials; modules; packaging; power IC; power semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location
Monterey, CA, USA
ISSN
1063-6854
Print_ISBN
0-7803-1313-5
Type
conf
DOI
10.1109/ISPSD.1993.297089
Filename
297089
Link To Document