• DocumentCode
    1895040
  • Title

    Progress in new materials for power electronics: SiC

  • Author

    Helbig, R.

  • Author_Institution
    Inst. of Appl. Phys., Erlangen Univ., Germany
  • fYear
    1993
  • fDate
    18-20 May 1993
  • Firstpage
    6
  • Lastpage
    11
  • Abstract
    Some general physical properties of the different polytopes of SiC are discussed. A complete set of parameters for 6H-SiC for the simulation of electronic devices is given. To demonstrate the simulation of devices, the p-n-n+ diode and the vertical power MOSFET made of 6H-SiC are discussed
  • Keywords
    power electronics; power transistors; semiconductor device models; semiconductor diodes; semiconductor materials; silicon compounds; 6H-polytypes; OSSI; PISCES; SiC polytypes; p-n-n+ diode; physical properties; power electronics materials; simulation of devices; vertical power MOSFET; Bonding; Chemicals; Crystalline materials; Crystals; Effective mass; Electrons; Photonic band gap; Piezoelectric materials; Semiconductor materials; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
  • Conference_Location
    Monterey, CA
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-1313-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.1993.297097
  • Filename
    297097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1895040