InSb-based electron devices

As far beck as 1997 it was demonstrated [1.2] that the InSb compound is the highly promising material to be used for practical nanoelectronics. In 2005 the Intel company came forward with a special report wich it stated that a new quantum transistor with an InSb-based conductive channel had been engineered. The out come of the Intel technological advances in this field was regarded as the Moore´s law prolongation that would be valid for more than ten years ahead. InSb is the best candidate as an substitude for Si in modern electronics and this material has by now been the material to be extensively studied in the USA and China.