DocumentCode
1895336
Title
Laser Mapping of SRAM sensitive cells. A way to obtain input parameters for DASIE calculation code
Author
Miller, F. ; Buard, N. ; Hubert, G. ; Alestra, S. ; Baudrillard, G. ; Carrière, T. ; Gaillard, R. ; Palau, J.M. ; Saigné, F. ; Fouillat, A.
Author_Institution
Eur. Aeronaut. Defence & Space Co., Suresnes
fYear
2005
fDate
19-23 Sept. 2005
Abstract
This paper presents a new way of investigation using the laser method. It is based on laser threshold mappings of electronic devices. The main idea is to use these mappings in order to extract physical parameters, for instance sizes and shapes of the different sensitive areas of a component. These parameters can be used as input parameters for analytical or Monte Carlo calculation codes in order to predict the behaviour of sensitive components towards radiations.
Keywords
Monte Carlo methods; SRAM chips; measurement by laser beam; DASIE calculation code; Monte Carlo calculation; SRAM sensitive cells; electronic devices; laser threshold mappings; Laser beams; National electric code; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location
Cap d´Agde
ISSN
0379-6566
Print_ISBN
978-0-7803-9502-2
Electronic_ISBN
0379-6566
Type
conf
DOI
10.1109/RADECS.2005.4365588
Filename
4365588
Link To Document