• DocumentCode
    1895528
  • Title

    Power Semiconductors: Status and Trends in Process/Device/Circuit CAD

  • Author

    Shenai, K.

  • Author_Institution
    General Electric Corporate R&D Center, NY
  • fYear
    1993
  • fDate
    6-7 March 1993
  • Firstpage
    21
  • Lastpage
    21
  • Abstract
    Summary form only given. High-voitage semiconductor devices used in advanced power conditioning systems can be broadly catagorized into two classes: (1) low- and medium-power devices for applications below 200V (mostly power MOSFET´s) and (2) medium- and high-power dsvices used for applications upto several kilovolts (predominantly conductivity modulated power devices such as the IGBTs and MCTs). Unlike small-signal devices, power devices are fabrimtad using wafer processing at temperatures in excgss of 1 OOO*C, and henC8, process models must incorporate high-temperature diffusion physics.
  • Keywords
    Circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
  • Conference_Location
    Taipei, Taiwan
  • Print_ISBN
    0-7803-1225-2
  • Type

    conf

  • DOI
    10.1109/SMS.1993.664535
  • Filename
    664535