DocumentCode
1895528
Title
Power Semiconductors: Status and Trends in Process/Device/Circuit CAD
Author
Shenai, K.
Author_Institution
General Electric Corporate R&D Center, NY
fYear
1993
fDate
6-7 March 1993
Firstpage
21
Lastpage
21
Abstract
Summary form only given. High-voitage semiconductor devices used in advanced power conditioning systems can be broadly catagorized into two classes: (1) low- and medium-power devices for applications below 200V (mostly power MOSFET´s) and (2) medium- and high-power dsvices used for applications upto several kilovolts (predominantly conductivity modulated power devices such as the IGBTs and MCTs). Unlike small-signal devices, power devices are fabrimtad using wafer processing at temperatures in excgss of 1 OOO*C, and henC8, process models must incorporate high-temperature diffusion physics.
Keywords
Circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location
Taipei, Taiwan
Print_ISBN
0-7803-1225-2
Type
conf
DOI
10.1109/SMS.1993.664535
Filename
664535
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