High Q microwave inductors in CMOS double-metal technology and its substrate bias effects for 2 GHz RF ICs application

Author

Min Park ; Cheon Soo Kim ; Jong Moon Park ; Hyun Kyu Yu ; Kee Soo Nam

Author_Institution

Div. of Semicond. Technol., Electron. & Telecommun. Res. Inst., Taejon, South Korea

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

59

Lastpage

62

Abstract

This paper presents high quality factor (Q) microwave inductors (up to 20) fabricated on a high-resistivity substrate with a thick-metal layer integrated by using only CMOS double-metal interconnection technology for 2 GHz RF ICs applications. A quality factor Q of 20.1 at 3.25 GHz for 11.9 nH-inductor has been achieved. Also we report a low-loss substrate bias technique to improve the Q of the inductors.

Keywords

CMOS integrated circuits; Q-factor; UHF integrated circuits; inductors; integrated circuit interconnections; integrated circuit metallisation; 2 to 3.5 GHz; CMOS double-metal technology; RF IC application; Si; UHF IC; high Q microwave inductors; high quality factor; high-resistivity substrate; interconnection technology; low-loss substrate bias technique; substrate bias effects; CMOS technology; Conductivity; Fabrication; Inductors; Microwave technology; Q factor; Radio frequency; Silicon; Spirals; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.649456

Filename

649456