Proton Irradiation of Silicon Schottky Barrier Power Diodes

Author

Harris, Richard D. ; Frasca, Albert J.

Author_Institution

Aiialex Corp., Cleveland

fYear

2005

fDate

19-23 Sept. 2005

Abstract

Commercial silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. The diodes show excellent resistance to radiation damage. Changes in forward and reverse bias I-V characteristics are reported for irradiated commercial Schottky barrier diodes at fluences up to 4xl0¹⁴ p/cm². Small changes are seen in the reverse bias I-V characteristics with increasing irradiation fluence. In forward bias, the series resistance is observed to increase as the fluence increases. The changes in series resistance are interpreted as being due to changes in the effective dopant density due to carrier removal by the defects produced.

Keywords

Schottky diodes; doping profiles; elemental semiconductors; proton effects; silicon; Si; effective dopant density; electron volt energy 203 MeV; forward bias I-V characteristics; proton irradiation; resultant displacement damage; reverse bias I-V characteristics; series resistance; silicon Schottky barrier power diodes; Connectors; Instruments; Lead; Packaging; Particle beams; Protons; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon; Displacement damage; I-V characteristics; Schottky diode; proton irradiation; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on

Conference_Location

Cap d´Agde

ISSN

0379-6566

Print_ISBN

978-0-7803-9502-2

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2005.4365615

Filename

4365615