DocumentCode
1896048
Title
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 [Front Matter]
fYear
1998
fDate
1-4 Nov. 1998
Abstract
Presents the front cover and front matter from the conference proceedings.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit modelling; integrated circuit technology; large scale integration; millimetre wave amplifiers; mixed analogue-digital integrated circuits; monolithic integrated circuits; power amplifiers; semiconductor device models; FET technology; GaAs; GaAs monolithic ICs; HBT technology; LSI circuits; MM-wave amplifiers; active device modelling; automotive technology; frequency translation techniques; high integration signal processing; high performance circuits; manufacturing techniques; mixed-signal circuits; mobile technology; power amplifiers; ultra-high speed ICs;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location
Atlanta, GA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5049-9
Type
conf
DOI
10.1109/GAAS.1998.722586
Filename
722586
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