Multistable body potentials-the cause for hysteresis behavior in SOI MOSFETs

Author

Liu, Patrick S. ; Liu, George T. ; Li, G.P. ; White, Joe ; Kjar, Ray

Author_Institution

Rockwell Int., Newport Beach, CA, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

94

Lastpage

95

Abstract

The BCS (body current scanning) technique has been used to resolve the hysteresis effect in the I_DS and I_DS-V_DS characteristics for SOI (silicon-on-insulator) NMOS transistors. BCS has identified the presence of multistable body potentials to be the cause of hysteresis. Furthermore, the amount of charges accumulated in the SOI body can be modulated by maximum electric field, carrier lifetime, and parasitic bipolar emitter injection efficiency. As a result, the hysteresis effect is more pronounced at high drain bias or lower temperature

Keywords

carrier lifetime; hysteresis; insulated gate field effect transistors; semiconductor-insulator boundaries; NMOS transistors; SOI MOSFETs; Si; body current scanning; carrier lifetime; hysteresis behavior; maximum electric field; multistable body potentials; parasitic bipolar emitter injection efficiency; Current measurement; Digital communication; Displays; Hysteresis; MOS devices; MOSFETs; Measurement techniques; Temperature; Testing; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162873

Filename

162873