DocumentCode
1896085
Title
The Modeling and Characterization of Poly-Emitter n-p-n Bipolar Transistor in Bicmos Device
Author
Hong, G.M. ; Lin, J.Y. ; Chang, K.Z. ; Lu, S.G. ; Hwang, H.L.
fYear
1993
fDate
6-7 March 1993
Firstpage
31
Lastpage
32
Keywords
BiCMOS integrated circuits; Bipolar transistors; Bones; Grain boundaries; Leakage current; Radiative recombination; Semiconductor films; Silicon; Thermal resistance; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location
Taipei, Taiwan
Print_ISBN
0-7803-1225-2
Type
conf
DOI
10.1109/SMS.1993.664538
Filename
664538
Link To Document