DocumentCode
1896308
Title
Model for stress in ZMR SOI obtained with spot- or line-shaped heat sources
Author
Mertens, P.W. ; Maes, H.E.
Author_Institution
IMEC, Leuven, Belgium
fYear
1991
fDate
1-3 Oct 1991
Firstpage
96
Lastpage
97
Abstract
A model is presented that allows the calculation of the absolute value of the final stress in ZMR SOI (silicon-on-insulator) layers. Both the case of a line shaped heat source, such as a lamp heater or a graphite strip heater, and the case of a scanning focused spot shaped beam, e.g., a laser or electron beam, are described based on one common physical model. Different calculated and measured values for linear and spot heat sources are listed, and the calculated results are in agreement with experimental observations
Keywords
heating; recrystallisation; semiconductor device models; semiconductor-insulator boundaries; stress analysis; zone melting; SOI layers; Si; ZMR; electron beam; graphite strip heater; lamp heater; laser; line-shaped heat sources; scanning focused spot shaped beam; zone melt recrystallisation; Cooling; Heating; Residual stresses; Semiconductor films; Silicon; Substrates; Temperature; Tensile stress; Thermal expansion; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location
Vail Valley, CO
Print_ISBN
0-7803-0184-6
Type
conf
DOI
10.1109/SOI.1991.162874
Filename
162874
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