MOS-gated bipolar Magnetotransistors for 360° angular sensing

Author

Zieren, Victor ; Wunnicke, Olaf ; Reimann, Klaus ; Duinmaijer, Aad ; Rijal, Rabindra

Author_Institution

Central R&D, NXP Semicond., Eindhoven, Netherlands

fYear

2014

fDate

2-5 Nov. 2014

Firstpage

702

Lastpage

705

Abstract

Bipolar npn Lateral MagnetoTransistors (LMTs) are attractive for in-plane magnetic-field sensing, but suffer from large offset. In this paper we introduce LMTs with several new features: (1) usage of a CMOS-SOI process (no substrate leakage), (2) two central emitters for smaller offset, and (3) emitter (E), base (B), and collector (C) contact definition by MOS-gate structures giving lower random fluctuations than Shallow Trench Insulation (STI). By TCAD simulation, modelling and sensor characterization of wafer-level and packaged samples, the sensitivity and offset of various LMT types are assessed over the automotive temperature range from -40°C to 150°C. A highly accurate 360° angular sensor for automotive applications is feasible when two LMT quadrant detectors are combined with an anisotropic magnetoresistance (AMR) 180° sensor using single or dual temperature calibration.

Keywords

CMOS integrated circuits; MOSFET; automotive electronics; calibration; enhanced magnetoresistance; magnetic field measurement; magnetic sensors; silicon-on-insulator; technology CAD (electronics); wafer level packaging; 360° angular sensor; AMR 180° sensor; CMOS-SOI process; LMT quadrant automotive; LMT quadrant detectors; MOS gate structure; MOS-gated bipolar magnetotransistors; TCAD simulation; anisotropic magnetoresistance; automotive applications; in-plane magnetic field sensing; lateral magnetotransistors; packaged samples; temperature calibration; wafer level samples; Calibration; Logic gates; Magnetic flux; Magnetic tunneling; Sensitivity; Temperature measurement; Temperature sensors; AMR Sensor; Angular Sensor; Bipolar Junction Transistor; CMOS; Calibration; LMT; Lorentz force; Magnetic field sensor; Magnetotransistor; Offset; SOI; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2014 IEEE

Conference_Location

Valencia

Type

conf

DOI

10.1109/ICSENS.2014.6985096

Filename

6985096