• DocumentCode
    1897407
  • Title

    Prototype development progress toward a 500 kV solid state Marx modulator

  • Author

    Lehy, G.E.

  • Author_Institution
    Stanford Linear Accelerator Center, Menlo Park, CA, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    20-25 June 2004
  • Firstpage
    831
  • Abstract
    Recent advances in IGBT and SiC technology have made possible a range of solid-state modulator concepts that were unthinkable a decade ago. Power densities and speeds of pulsed-power circuits have increased dramatically due to the commercial introduction of fast, multikilovolt IGBT silicon and SiC diodes featured in PCB-style packages. A solid-state modulator concept that stands to benefit considerably from recent IGBT and SiC breakthroughs is the Marx configuration-where an array of stacked modules generates high-voltage output pulses directly from a low voltage DC supply. The Marx scheme avoids the large, inefficient and costly magnetic cores inherent in standard modulator designs, resulting in a considerably simpler, cheaper and more compact mechanical solution. The main disadvantage to this approach is that the individual cells in a Marx bank must float at high voltages during the pulse, complicating the distribution of power and timing signals. This paper examines in closer detail the practical advantages and pitfalls of a solid-state Marx configuration, and explores a design approach with emphasis on performance, wall-plug efficiency, cost of manufacture, availability and ease of service. The paper presents electrical diagrams, mechanical CAD layout and preliminary prototype test data.
  • Keywords
    carbon compounds; insulated gate bipolar transistors; magnetic cores; power semiconductor diodes; printed circuits; pulsed power supplies; semiconductor device packaging; silicon compounds; technology CAD (electronics); 500 kV; DC supply; IGBT; PCB; SiC diodes; SiC technology; insulated gate bipolar transistor; magnetic cores; mechanical CAD layout; power density; printed circuit board; pulsed-power circuits; solid state Marx modulator; timing signals; DC generators; Diodes; Insulated gate bipolar transistors; Packaging; Prototypes; Pulse circuits; Pulse generation; Pulse modulation; Silicon carbide; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
  • ISSN
    0275-9306
  • Print_ISBN
    0-7803-8399-0
  • Type

    conf

  • DOI
    10.1109/PESC.2004.1355857
  • Filename
    1355857