DocumentCode
1897407
Title
Prototype development progress toward a 500 kV solid state Marx modulator
Author
Lehy, G.E.
Author_Institution
Stanford Linear Accelerator Center, Menlo Park, CA, USA
Volume
1
fYear
2004
fDate
20-25 June 2004
Firstpage
831
Abstract
Recent advances in IGBT and SiC technology have made possible a range of solid-state modulator concepts that were unthinkable a decade ago. Power densities and speeds of pulsed-power circuits have increased dramatically due to the commercial introduction of fast, multikilovolt IGBT silicon and SiC diodes featured in PCB-style packages. A solid-state modulator concept that stands to benefit considerably from recent IGBT and SiC breakthroughs is the Marx configuration-where an array of stacked modules generates high-voltage output pulses directly from a low voltage DC supply. The Marx scheme avoids the large, inefficient and costly magnetic cores inherent in standard modulator designs, resulting in a considerably simpler, cheaper and more compact mechanical solution. The main disadvantage to this approach is that the individual cells in a Marx bank must float at high voltages during the pulse, complicating the distribution of power and timing signals. This paper examines in closer detail the practical advantages and pitfalls of a solid-state Marx configuration, and explores a design approach with emphasis on performance, wall-plug efficiency, cost of manufacture, availability and ease of service. The paper presents electrical diagrams, mechanical CAD layout and preliminary prototype test data.
Keywords
carbon compounds; insulated gate bipolar transistors; magnetic cores; power semiconductor diodes; printed circuits; pulsed power supplies; semiconductor device packaging; silicon compounds; technology CAD (electronics); 500 kV; DC supply; IGBT; PCB; SiC diodes; SiC technology; insulated gate bipolar transistor; magnetic cores; mechanical CAD layout; power density; printed circuit board; pulsed-power circuits; solid state Marx modulator; timing signals; DC generators; Diodes; Insulated gate bipolar transistors; Packaging; Prototypes; Pulse circuits; Pulse generation; Pulse modulation; Silicon carbide; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
ISSN
0275-9306
Print_ISBN
0-7803-8399-0
Type
conf
DOI
10.1109/PESC.2004.1355857
Filename
1355857
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