• DocumentCode
    1897654
  • Title

    Hydrogen gas sensing application of Al/NiO Schottky diode

  • Author

    Stamataki, M. ; Sargentis, Ch ; Tsamakis, D. ; Fasaki, I. ; Kompitsas, M.

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Nat. Tech. Univ. of Athens, Athens
  • fYear
    2008
  • fDate
    26-29 Oct. 2008
  • Firstpage
    843
  • Lastpage
    846
  • Abstract
    Undoped p-type NiO thin film has been developed on high resistivity Si substrates by reactive pulsed laser deposition technique (RPLD). Subsequently an Al/NiO Schottky diode has been fabricated by electron gun evaporation and was functionalized as H2 gas sensor.
  • Keywords
    Schottky diodes; aluminium; gas sensors; hydrogen; nickel compounds; pulsed laser deposition; semiconductor materials; semiconductor thin films; silicon; vacuum deposition; Al-NiO; H2; Schottky diode; Si; electron gun evaporation; high resistivity substrates; hydrogen gas sensor; reactive pulsed laser deposition; thin film; Conductivity; Electrons; Gas lasers; Hydrogen; Optical pulses; Pulsed laser deposition; Schottky diodes; Semiconductor thin films; Sputtering; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2008 IEEE
  • Conference_Location
    Lecce
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-2580-8
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2008.4716572
  • Filename
    4716572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1897654