Effect of implantation energy on surface pitting of SIMOX

Author

Namavar, F. ; Cortesi, E. ; Manke, J.M. ; Kalkhoran, N.M. ; Buchanan, B.L. ; Pinizzotto, R.F. ; Yang, H.

Author_Institution

Spire Corp., Bedford, MA, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

108

Lastpage

109

Abstract

A systematic study to determine the effect of dose and dose rate on implanting oxygen at 80 and 160 keV is reported. Samples were produced by implanting oxygen into p-type Si(100) wafers at dose rates of 5-60 μA/cm² and doses from 3×10¹⁷ to 1.6×10¹⁸ O⁺/cm² using an Eaton NV10-160 implanter. Samples were studied using cross-sectional transmission electron microscopy, scanning electron microscopy, and Rutherford backscattering spectroscopy. The results obtained suggest that dose, dose rate, and energy thresholds for pit formation in the Si top layer of SIMOX (separation by implanted oxygen) samples exist. For example, for doses of both 3×10¹⁷ and 4×10¹⁷ O⁺/cm² the dose rate threshold is between 50 and 60 μA/cm². It is also shown that the threshold for pit formation can be increased by implanting through an oxide capping layer

Keywords

Rutherford backscattering; ion beam effects; ion implantation; ion-surface impact; oxygen; scanning electron microscope examination of materials; semiconductor-insulator boundaries; transmission electron microscope examination of materials; 160 keV; 80 keV; Eaton NV10-160 implanter; O implantation; O⁺ ions; RBS spectroscopy; Rutherford backscattering spectroscopy; SIMOX; Si; Si top layer; XTEM SEM; cross-sectional transmission electron microscopy; dose rates; doses; energy thresholds; implantation energy; oxide capping layer; pit formation; scanning electron microscopy; surface pitting; systematic study; Annealing; Energy measurement; Fabrication; Nitrogen; Oxygen; Scanning electron microscopy; Silicon; Temperature control; Temperature measurement; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162880

Filename

162880