p-type gas sensing behaviour in high energy ion beam irradiated un-doped SnO2 thin films

Author

Rani, Sanju ; Roy, Somnath C. ; Bhatnagar, M.C. ; Kanjilal, D.

Author_Institution

Dept. of Phys., Indian Inst. of Technol. Delhi, New Delhi

fYear

2008

fDate

26-29 Oct. 2008

Firstpage

886

Lastpage

889

Abstract

We report novel p-type behaviour in undoped SnO₂ thin films irradiated with 75 MeV Ni⁺ ion beam. Gas response of the irradiated films with NH₃ (reducing) and NO₂ (oxidizing) gases shows an increase and decrease in resistance respectively indicating p-type conduction that also increases with increase in ion fluence. Photoluminescence spectroscopy of the irradiated films shows strong yellow peak corresponding to interstitial oxygen ions. The observed p-type conductivity is attributed to holes generated by these interstitial oxygen ions. Presence of interstitial oxygen ions is also supported by X-ray photoelectron spectroscopy.

Keywords

X-ray photoelectron spectra; electrical conductivity; electron traps; gas sensors; interstitials; ion beam effects; photoluminescence; semiconductor materials; semiconductor thin films; tin compounds; vacancies (crystal); SnO₂; X-ray photoelectron spectroscopy; charge carriers; electron traps; electron volt energy 75 MeV; high energy ion beam irradiation; interstitial oxygen ions; oxidizing gases; p-type conductivity; p-type gas sensing behaviour; photoluminescence spectroscopy; undoped thin films; vacancy; Conductivity; Ion accelerators; Ion beams; Laboratories; Optical films; Photoluminescence; Physics; Roentgenium; Spectroscopy; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2008 IEEE

Conference_Location

Lecce

ISSN

1930-0395

Print_ISBN

978-1-4244-2580-8

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2008.4716583

Filename

4716583