Monolithic pin photodetector and FT amplifier on GaAs-on-Si

Author

Subbarao, S.N. ; Bechtle, D. ; Menna, R. ; Connolly, J. ; Camisa, R.L. ; Narayan, S.Y.

Author_Institution

David Smirnoff Res. Center, Princeton, NJ, USA

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

163

Lastpage

166

Abstract

The design, fabrication, and evaluation of GaAs-on-Si monolithic, lateral p-i-n photodetectors and MESFET amplifiers are described. The GaAs-on-Si was grown by OMCVD. The low-capacitance p-i-n detectors were fabricated directly on the GaAs high-resistivity buffer layer in a monolithic microwave integrated circuit (MMIC)-compatible process. Quantum efficiency results for the p-i-n detector and the 2- to 4-GHz frequency response of one- and two-stage p-i-n/FET preamplifiers are presented.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; gallium arsenide; integrated circuit technology; p-i-n diodes; photodiodes; preamplifiers; semiconductor junctions; 2 to 4 GHz; GaAs high-resistivity buffer layer; GaAs-Si; GaAs-on-Si; MESFET amplifiers; MMIC; OMCVD; design; evaluation; fabrication; lateral p-i-n photodetectors; low-capacitance p-i-n detectors; monolithic microwave integrated circuit; monolithic p-i-n/FET preamplifiers; p-i-n/FET preamplifiers; quantum efficiency; semiconductors; Buffer layers; Detectors; Fabrication; Gallium arsenide; MESFETs; MMICs; Microwave FET integrated circuits; Microwave integrated circuits; PIN photodiodes; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69317

Filename

69317