Processing and transistor characteristics of a 256 K SRAM fabricated on SIMOX

Author

Bailey, W.E. ; Lu, H. ; Blake, T.G.W. ; Hite, L.R. ; Mei, P. ; Hurta, D. ; Houston, T.W. ; Pollack, G.P.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

134

Lastpage

135

Abstract

The authors describe the one-micron CMOS technology for a 256 K SRAM (static random-access memory) on SIMOX (separation by implanted oxygen) which produced fully functional devices in July of 1990. An outline of the process sequence, the characteristics of the world´s first 256 K SRAM, and a statistical study of across-the-wafer and wafer-to-wafer parametric parameters taken from test die using this process are presented. The availability of a standardized production process and multiple wafer lots consisting of SIMOX material provides a special tool allowing for statistical observations of device processing and wafer preparation characteristics such as single and multiple wafer implants

Keywords

CMOS integrated circuits; SRAM chips; VLSI; integrated circuit technology; semiconductor-insulator boundaries; 1 micron; 256 kbit; CMOS technology; July 1990; SIMOX; SRAM; Si-SiO₂; VLSI; across wafer test parameters; characteristics; fully functional devices; multiple wafer lots; parametric parameters; process sequence; processing; standardized production process; static random-access memory; statistical study; test die; transistor characteristics; wafer implants; wafer preparation; wafer-to-wafer test parameters; CMOS process; CMOS technology; Contacts; Fabrication; Implants; Instruments; Optimized production technology; Random access memory; Silicon; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162893

Filename

162893