• DocumentCode
    1898897
  • Title

    An investigation on the cutoff characteristics of sub-quarter-micron SOI MOSFET

  • Author

    Koh, Risho ; Mogami, Tohru ; Ogura, Atsushi

  • Author_Institution
    NEC Corp., Kanagawa, Japan
  • fYear
    1991
  • fDate
    1-3 Oct 1991
  • Firstpage
    152
  • Lastpage
    153
  • Abstract
    The influence of DIBL on the latch condition for subquarter-micron SOI (silicon-on-insulator) MOSFETs is investigated. It is found that the main effect of DIBL is lowering the minimum hole current for latch. Simulated results on device structures proposed to improve cutoff characteristics are also shown. The cutoff characteristics of an SOI MOSFET (L=0.2 μm) for which higher acceptor concentration (Na=2×1017 cm-3) SOI film and LDD (lightly doped drain) structure are adopted are shown. These design options are effective for reducing DIBL at the SOI bottom
  • Keywords
    insulated gate field effect transistors; semiconductor-insulator boundaries; 0.2 to 0.25 micron; DIBL; LDD structure; MOSFET; SOI; cutoff characteristics; latch condition; subquarter-micron; Analytical models; Bipolar transistors; Charge carrier processes; Electrodes; Impact ionization; MOSFET circuits; Microelectronics; National electric code; Parasitic capacitance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1991. Proceedings, 1991., IEEE International
  • Conference_Location
    Vail Valley, CO
  • Print_ISBN
    0-7803-0184-6
  • Type

    conf

  • DOI
    10.1109/SOI.1991.162902
  • Filename
    162902
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1898897