CVD TiSiN diffusion barrier integration in sub-130 mn technology nodes

Author

Prindle, C. ; Brennan, B. ; Denning, D. ; Shahvandi, I. ; Guggilla, S. ; Ling Chen ; Marcadal, C. ; Deyo, D. ; Bhandary, U.

Author_Institution

Motorola Inc., Austin, TX, USA

fYear

2002

fDate

5-5 June 2002

Firstpage

182

Lastpage

184

Abstract

Metalorganic chemical vapor deposition (MOCVD) titanium silicon nitride (TiSiN) has emerged as a strong candidate for a next-generation diffusion barrier material in copper/low-k dielectric back-end-of-line (BEOL) device fabrication. As ionized physical vapor deposition (PVD) Ta(N) barriers currently used in high-volume production begin to exhibit marginal film continuity in high aspect ratio device features, more conformal barrier materials become a requirement. Material, electrical, and reliability properties are strongly influenced by CVD TiSiN film thickness, process sequencing, and incoming surface cleanliness of device features. TiSiN has been shown to possess the necessary material and electrical properties to be successfully integrated in sub-130 nm copper/low-k semiconductor device technology nodes.

Keywords

MOCVD; chemical interdiffusion; conformal coatings; copper; dielectric thin films; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; permittivity; silicon compounds; surface contamination; titanium compounds; vapour phase epitaxial growth; 130 nm; CVD TiSiN diffusion barrier integration; CVD TiSiN film thickness; Cu; MOCVD TiSiN; TiSiN; conformal barrier materials; copper/low-k dielectric BEOL device fabrication; copper/low-k dielectric back-end-of-line device fabrication; copper/low-k semiconductor device technology nodes; device features; diffusion barrier material; electrical properties; film continuity; high aspect ratio device features; high-volume production; incoming surface cleanliness; ionized physical vapor deposition Ta barriers; ionized physical vapor deposition TaN barriers; material properties; metalorganic chemical vapor deposition titanium silicon nitride; process sequencing; reliability properties; technology nodes; Chemical technology; Chemical vapor deposition; Copper; Dielectric devices; Dielectric materials; Inorganic materials; MOCVD; Semiconductor materials; Silicon; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014927

Filename

1014927