Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization

Author

Van der Straten, O. ; Zhu, Y. ; Eisenbraun, E. ; Kaloyeros, A.

Author_Institution

Sch. of Nanosciences & Nanoenginecring, State Univ. of New York, Albany, NY, USA

fYear

2002

fDate

2002

Firstpage

188

Lastpage

190

Abstract

The barrier performance of a metal-organic atomic layer deposition (ALD) tantalum nitride process has been investigated for potential application as copper diffusion barrier in future device generations. This process, which is carried out at 250°C, thus enabling excellent integrability with thermally fragile dielectric systems, employs a commercial ALD reactor. Preliminary copper barrier performance results of ultrathin (6 nm) TaN_x films, employing both thermal and electrical biasing, are presented and discussed.

Keywords

atomic layer epitaxial growth; chemical interdiffusion; copper; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; nanotechnology; tantalum compounds; thermal stresses; 250 C; 6 nm; ALD; ALD reactor; Cu-TaN; copper diffusion barrier; electrical barrier performance testing; electrical biasing; integrability; metal-organic atomic layer deposition tantalum nitride process; nanoscale copper metallization; thermal barrier performance testing; thermal biasing; thermally fragile dielectric systems; ultrathin TaN_x films; ultrathin atomic layer deposition tantalum-based materials; Argon; Atomic layer deposition; Copper; Dielectric thin films; Inductors; Inorganic materials; Nanoscale devices; Semiconductor films; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014929

Filename

1014929