DocumentCode
1900693
Title
Deposition of WNxCy thin films by ALCVD™ method for diffusion barriers in metallization
Author
Li, Wei-Min ; Elers, Kai ; Kostamo, Juhana ; Kaipio, Sari ; Huotari, Hannu ; Soininen, Matti ; Soininen, Peka J. ; Tuominen, Marko ; Haukka, Suvi ; Smith, Steven ; Besling, Wim
Author_Institution
ASM Microchemistry Ltd., Espoo, Finland
fYear
2002
fDate
2002
Firstpage
191
Lastpage
193
Abstract
A new process of depositing ternary tungsten nitride carbide WNxCy films as a diffusion barrier material for copper metallization has been developed with the atomic layer chemical vapor deposition (ALCVD™) technology. The growth temperature was varied from 300 to 350°C, and the resistivity was in a range of 300-400 μΩcm for a ∼25 nm film. The film composition was influenced by deposition conditions with a W, N and C content of approximately 55, 15, and 30 at.%, respectively. Impurities such as F, O, and B in the bulk of the film were low, less than 1 at.% or under the detection limit of analysis tools used. The deposited films showed excellent compatibility with different substrates including Cu, SiO2, SiC, SixNy, SiLK and Aurora. Preliminary electrical tests of WNxCy on the dual damascene wafers showed promising results.
Keywords
atomic layer epitaxial growth; chemical interdiffusion; chemical vapour deposition; copper; diffusion barriers; electrical resistivity; impurity distribution; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; tungsten compounds; 25 nm; 300 to 350 C; ALCVD; Aurora substrates; Cu; Cu metallization diffusion barrier material; Cu substrates; SiC; SiC substrates; SiLK substrates; SiN; SiN substrates; SiO2; SiO2 substrates; WNC; WNC thin film atomic layer CVD; WNC-Cu; WNC-SiC; WNC-SiN; WNC-SiO2; analysis tool detection limits; atomic layer chemical vapor deposition technology; bulk film impurities; deposition conditions; dual damascene wafers; film composition; film growth temperature; film resistivity; ternary tungsten nitride carbide films; Atomic layer deposition; Chemical technology; Chemical vapor deposition; Conductivity; Copper; Impurities; Inorganic materials; Metallization; Temperature distribution; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN
0-7803-7216-6
Type
conf
DOI
10.1109/IITC.2002.1014930
Filename
1014930
Link To Document