DocumentCode
1901404
Title
Deposition of Cu barrier and seed layers with atomic layer control
Author
Haukka, Suvi ; Raaijmakers, Lvo ; Elers, Kai-Erik ; Kostamo, Juhana ; Li, Wei-Min ; Sprey, Hessel ; Soininen, Pekka J. ; Tuominen, Marko
Author_Institution
ASM Microchemistry Ltd., Espoo, Finland
fYear
2002
fDate
2002
Firstpage
279
Lastpage
281
Abstract
The paper describes the atomic layer chemical vapor deposition (ALCVD™) technique for manufacturing the Cu barrier and seed layers. In addition a novel and simple method for the removal of CuO from the bottom of the via is presented. The main emphasis of the paper is on the ALCVD™ growth mechanisms and on the compatibility of barrier layer deposition with low-k materials and Cu metal.
Keywords
chemical vapour deposition; copper; integrated circuit metallisation; ALCVD growth mechanisms; Cu; Cu barrier layers; Cu metallization; Cu seed layers; CuO removal; atomic layer chemical vapor deposition; atomic layer control; barrier layer deposition; dual damascene structure; low-k materials; Atherosclerosis; Atomic layer deposition; Bonding; Chemical technology; Chemical vapor deposition; Inorganic materials; Metallization; Pulp manufacturing; Temperature; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN
0-7803-7216-6
Type
conf
DOI
10.1109/IITC.2002.1014956
Filename
1014956
Link To Document