DocumentCode
1901717
Title
High reliability HV-CMOS transistors in standard CMOS technology
Author
Sun, W.F. ; Shi, L.X.
Author_Institution
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
fYear
2003
fDate
7-11 July 2003
Firstpage
25
Lastpage
28
Abstract
A novel high-reliability HV-CMOS (High Voltage CMOS) compatible with 0.6μm rules standard Bulk-Silicon (BS) CMOS process was proposed. The reliability of the HV-CMOS is greatly improved by adding the p-well to HV-PMOS (High Voltage PMOS) for etching the unwanted thick-gate-oxide film and that to HV-DNMOS (High Voltage Double-Diffusion NMOS) for preventing punch-through. The breakdown voltage of the presented HV-CMOS exceeds 100 V, which can be used in power driver ICs, etc.
Keywords
CMOS integrated circuits; MOSFET; electric breakdown; etching; reliability; thin film transistors; CMOS technology; CMOS transistors; breakdown voltage; etching; gate-oxide film; high voltage CMOS; reliability; Annealing; Boron; CMOS logic circuits; CMOS process; CMOS technology; Driver circuits; Etching; MOS devices; Sun; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN
0-7803-7722-2
Type
conf
DOI
10.1109/IPFA.2003.1222714
Filename
1222714
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