Bending-comb capacitor with a small parasitic inductance

Author

Imamura, A. ; Fujishima, M. ; Hoh, K.

Author_Institution

Sch. of Eng., Univ. of Tokyo, Japan

fYear

2002

fDate

13-15 June 2002

Firstpage

22

Lastpage

25

Abstract

A new metal-metal capacitor with a small parasitic inductance, named a bending-comb capacitor (BCC), is proposed based on a standard digital CMOS technology. The BCC is applicable to high frequency circuits due to its high self-resonance frequency. An analytical evaluation of the capacitance from the geometry size is also presented. The self-resonance frequency of the BCC of 0.85 pF with the size of 10 /spl mu/m /spl times/ 100 /spl mu/m is estimated as 374 GHz with a 0.13-/spl mu/m Cu-wiring CMOS process. This frequency is about six times higher than that estimated by the conventional comb capacitor.

Keywords

CMOS digital integrated circuits; UHF integrated circuits; VLSI; capacitors; high-speed integrated circuits; inductance; resonance; 0.13 micron; 0.85 pF; 10 micron; 100 micron; 374 GHz; Cu; Cu-wiring CMOS process; RF circuits; bending-comb capacitor; capacitance analytical evaluation; digital CMOS technology; high frequency circuits; high self-resonance frequency; metal-metal capacitor; small parasitic inductance; CMOS process; CMOS technology; Capacitors; Circuits; Electrodes; Frequency estimation; Inductance; Parasitic capacitance; Radio frequency; Teeth;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits Digest of Technical Papers, 2002. Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7310-3

Type

conf

DOI

10.1109/VLSIC.2002.1015033

Filename

1015033