Metal oxide semiconductor UV sensor

By using appropriate the material of gate electrode in metal-oxide-semiconductor structure, a Si-based photodetector for ultraviolet light (319 nm) detection has been demonstrated. Due to the spectral dependence of absorption coefficients of the Ag as gate electrode, the narrow-band detection of ultra violet can be achieved. The Ag photodetector exhibits maximum responsivity value of 5.59 mA/W at 319 nm. As compared to the p-i-n structure, the metal-oxide-semiconductor tunneling photodetector has a much simpler process and can integrate with integrated circuitry.