Mobility issues in ultra-thin SOI MOSFETs: thickness variations, GIFBE and coupling effects

Author

Ohata, Akiko ; Cass, Mikaël ; Cristoloveanu, Sorin ; Poiroux, T.

Author_Institution

IMEP, ENSERG, Grenoble, France

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

109

Lastpage

112

Abstract

The impact of film thickness variation and ultrathin gate oxide on the carrier mobility is investigated in 10-15 nm thick SOI MOSFETs. Once the parasitic resistance effect was eliminated, the mobility is independent of SOI thickness. A difference between front and back channel mobility is observed and discussed. In SOI MOSFETs with ultra-thin gate oxide, gate-induced floating body effects occur, leading to mobility overestimation, in particular at low temperature. In ultra-thin SOI films, super-coupling between the front and back channels can also be responsible for a mobility misevaluation.

Keywords

MOSFET; carrier mobility; silicon-on-insulator; 10 to 15 nm; GIFBE; SOI thickness independent mobility; back channel mobility; carrier mobility; film thickness variation; front channel mobility; front/back channel super-coupling effects; gate-induced floating body effects; parasitic resistance effect; ultra-thin SOI MOSFET; ultra-thin gate oxide; Electrodes; Electron mobility; Fluctuations; Lead compounds; MOSFETs; Oxidation; Temperature; Thickness measurement; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Print_ISBN

0-7803-8478-4

Type

conf

DOI

10.1109/ESSDER.2004.1356500

Filename

1356500