Physical Failure Analysis techniques for Cu/low k technology

Author

Wu, Huixian ; Hooghan, Bobby ; Cargo, James

Author_Institution

Product Anal. Lab, Agere Syst., Allentown, PA, USA

fYear

2003

fDate

7-11 July 2003

Firstpage

187

Lastpage

192

Abstract

In this work, physical FA techniques including deprocessing and cross section analysis have been developed and applied to Cu/low k technology. Deprocessing techniques discussed include: wet chemical etching, reactive ion etching (RIE), parallel polishing, chemical mechanical polishing (CMP) and combination of these techniques. For the cross-section analysis of copper/low k samples, focused ion beam and mechanical polishing techniques have been developed and studied. Failure Analysis (FA) challenges and new failure modes, reliability issues will also be addressed.

Keywords

chemical mechanical polishing; copper; dielectric materials; failure analysis; integrated circuit interconnections; reliability; sputter etching; Cu; Cu/low dielectric constant technology; chemical mechanical polishing; cross section analysis; deprocessing techniques; focused ion beam; parallel polishing; physical failure analysis; reactive ion etching; reliability; wet chemical etching; Chemical technology; Copper; Delay; Dielectric materials; Failure analysis; High K dielectric materials; Integrated circuit interconnections; Integrated circuit technology; Ion beams; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the

Print_ISBN

0-7803-7722-2

Type

conf

DOI

10.1109/IPFA.2003.1222763

Filename

1222763