DocumentCode
1902475
Title
Identify Optical Proximity Correction (OPC) issue in 0.13 μm technology development
Author
Mai, Zhi Hong ; Lau, Benjamin ; Qian, Gang ; Shi, Jian Jun ; He, Ran ; Chin, Jessica
Author_Institution
Technol. Dev. Dept., Chartered Semicond. Manuf. Ltd., Singapore, Singapore
fYear
2003
fDate
7-11 July 2003
Abstract
In this paper, we explained a failure analysis methodology to identify optical proximity correction issues in 0.13 μm technology development. Here we used, the continue-on-failure wafer sort technology for yield analysis.
Keywords
failure analysis; integrated circuit yield; reticles; 0.13 micron; failure analysis; failure wafer; optical proximity correction; wafer sort technology; yield analysis; Analog integrated circuits; Circuit testing; Failure analysis; Foundries; Information analysis; Isolation technology; Liquid crystals; Lithography; Logic devices; Prototypes;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN
0-7803-7722-2
Type
conf
DOI
10.1109/IPFA.2003.1222765
Filename
1222765
Link To Document