Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs

Author

Jae-Yoon Sim ; Hongil Yoon ; Ki-Chul Chun ; Hyun-Seok Lee ; Sang-Pyo Hong ; Soo-Young Kim ; Min-Soo Kim ; Kyu-Chan Lee ; Jei-Hwan Yoo ; Dong-Il Seo ; Soo-In Cho

Author_Institution

Memory Product & Technol. Div., Samsung Electron., Kyunggi, South Korea

fYear

2002

fDate

13-15 June 2002

Firstpage

294

Lastpage

297

Abstract

A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15/spl mu/m technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.

Keywords

DRAM chips; VLSI; differential amplifiers; low-power electronics; temperature sensors; 0.15 micron; 1.8 V; 128 Mbit; SDRAM; binary weighted adjustment technique; double boosting pump; hybrid current sense amplifier; low current mobile applications; pumping efficiency; stable I-to-V gain; temperature sensor; Boosting; Circuits; Consumer electronics; Degradation; Low voltage; Power generation; Random access memory; Switches; Temperature sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits Digest of Technical Papers, 2002. Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7310-3

Type

conf

DOI

10.1109/VLSIC.2002.1015108

Filename

1015108