DocumentCode
1903674
Title
A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation
Author
Prasad, S.J. ; Vetanen, B. ; Haynes, C. ; Park, S. ; Beers, I. ; Diamond, S. ; Pubanz, G. ; Ebner, J. ; Sanielevici, S. ; Agoston, A.
Author_Institution
Electronics Research Labs, MS 50-223, Tektronix, Beaverton, OR 97077, USA
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
413
Lastpage
416
Abstract
A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.
Keywords
Capacitance; Circuits; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Isolation technology; MIM capacitors; Resistors; Schottky diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435129
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