DocumentCode
1904106
Title
A 90nm Embedded 2-Bit Per Cell Nanocrystal Flash EEPROM
Author
Prinz, Erwin J. ; Yater, Jane ; Steimle, Robert ; Sadd, Michael ; Swift, Craig ; Chang, Ko-Min
Author_Institution
Technol. Solutions Organ., Freescale Semicond. Inc., Austin, TX
fYear
2006
fDate
12-16 Feb. 2006
Firstpage
62
Lastpage
63
Abstract
A two bit/cell embedded nanocrystal bitcell with low write current SSI program and tunnel erase in which nanocrystals are located under dedicated control gates has been demonstrated. Write bias conditions which mitigate gate disturb in a top erase capable bitcell have been confirmed
Keywords
embedded systems; flash memories; nanoelectronics; nanostructured materials; 2 bit; 2-bit per cell nanocrystal flash EEPROM; 90 nm; control gates; embedded nanocrystal bitcell; embedded nanocrystal flash memory; low write current SSI program; top erase capable bitcell; tunnel erase; write bias conditions; EPROM; Electrons; Implants; Nanocrystals; Nonvolatile memory; SONOS devices; Thickness control; Threshold voltage; Throughput; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location
Monterey, CA
Print_ISBN
1-4244-0027-9
Type
conf
DOI
10.1109/.2006.1629495
Filename
1629495
Link To Document