• DocumentCode
    1904177
  • Title

    Through-Silicon Via Technologies for Extreme Miniaturized 3D Integrated Wireless Sensor Systems (e-CUBES)

  • Author

    Ramm, Peter ; Klumpp, Armin

  • Author_Institution
    Fraunhofer Institute for Reliability and Microintegration, Hansastrasse 27d, Munich, Germany
  • fYear
    2008
  • fDate
    1-4 June 2008
  • Firstpage
    7
  • Lastpage
    9
  • Abstract
    Fraunhofer IZM introduced a 3-D integration process, the so-called ICV-SLID technology based on inter-chip vias through the device substrates (through silicon vias) and metal bonding using solid-liquid-interdiffusion (SLID) soldering for simultaneous mechanical and the electrical connection [1]. The ICV-SLID technology is optimized for 3D integration of e-CUBES processing units, while interconnection techniques by hollow vias and Au stud bumps are used for stacking of sensor devices to the 3D-IC.
  • Keywords
    Copper; Gold; Mechanical sensors; Sensor systems; Silicon; Stacking; Tin; Transceivers; Wafer bonding; Wireless sensor networks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2008. IITC 2008. International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    978-1-4244-1911-1
  • Electronic_ISBN
    978-1-4244-1912-8
  • Type

    conf

  • DOI
    10.1109/IITC.2008.4546909
  • Filename
    4546909